symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 275 330 c/w n-ch 360 450 c/w r jl n-ch 300 350 c/w p-ch 275 330 c/w p-ch 360 450 c/w r jl p-ch 300 350 c/w t c =25c t c =100c pulsed drain current b a -1 continuous drain current b,h i d -0.38 -0.5 0.6 p d parameter maximum junction-to-ambient a t 10s 20 -20 drain-source voltage gate-source voltage 8 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 0.24 0.38 0.24 r ja maximum junction-to-ambient a steady-state 0.4 3 0.38 power dissipation t c =100c t c =25c steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s maximum junction-to-lead c steady-state r ja -55 to 150 maximum junction-to-ambient a junction and storage temperature range thermal characteristics: n-channel and p-channel features n-channel v ds (v) = 20v, i d = 0.6a (v gs =4.5v) r ds(on) < 0.65 (v gs = 4.5v) r ds(on) < 0.75 (v gs = 2.5v) r ds(on) < 0.95 (v gs = 1.8v) p-channel v ds (v) = -20v, i d = -0.5a (v gs =-4.5v) r ds(on) < 0.8 (v gs = -4.5v) r ds(on) < 1.0 (v gs = -2.5v) r ds(on) < 1.3 (v gs = -1.8v) the AO5600E/l uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications.AO5600E and AO5600El are electrically identical. -rohs compliant -AO5600El is halogen free g2 d2 g1 d1 1 s1 s2 AO5600E complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 9
symbol min typ max units bv dss 20 v 1 t j =55c 5 1 a 100 a v gs(th) 0.45 0.6 1 v i d(on) 3a 0.54 0.65 t j =125c 0.81 1 0.63 0.75 ? 0.73 0.95 ? g fs 1.5 s v sd 0.65 1 v i s 0.4 a c iss 35 45 pf c oss 8pf c rss 6pf q g 0.63 1 nc q gs 0.08 nc q gd 0.16 nc t d(on) 4.5 ns t r 3.3 ns t d(off) 70 ns t f 35 ns t rr 8 10 ns q rr 2 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =0.5a, di/dt=100a/ s body diode reverse recovery charge i f =0.5a, di/dt=100a/ s v gs =5v, v ds =10v, r l =50 ? , r gen =3 ? turn-off fall time turn-on delaytime turn-on rise time turn-off delaytime switching parameters v gs =4.5v, v ds =10v, i d =0.5a gate source charge gate drain charge total gate charge i gss gate-body leakage current on state drain current r ds(on) static drain-source on-resistance gate threshold voltage drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =20v, v gs =0v n-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters ? v ds =0v, v gs =4.5v v ds =0v, v gs =8v v ds =v gs i d =250 a v gs =4.5v, i d =0.5a ? v gs =2.5v, i d =0.5a v gs =1.8v, i d =0.3a v gs =4.5v, v ds =5v maximum body-diode continuous current i s =0.1a,v gs =0v v gs =0v, v ds =10v, f=1mhz forward transconductance v ds =5v, i d =0.5a diode forward voltage input capacitance output capacitance reverse transfer capacitance dynamic parameters a: the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using the steady state junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. the maximum current rating is limited by bond-wires. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the maximum current rating is limited by bond-wires rev5: oct 2008 AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 2 / 9
n-channel typical electrical and thermal characteristics 0 1 2 3 0 1 2 3 4 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v v gs =1v 2v 4.5v 1.5v 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v id=0.5a v gs =1.8v id=0.3a 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ) 25c 125c v ds =5v v gs =1.8v v gs =4.5v i d =0.5a 25c 125c v gs =2.5v v gs =2.5v id=0.5a 2.5v AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 3 / 9
n-channel typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 20 40 60 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) ciss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss v ds =10v i d =0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =330c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t on t p d t on p d 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 10ms 1ms 1s dc r ds(on) limited t j(max) =150c t a =25c 100 s 10s 0.1s AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 4 / 9
symbol min typ max units bv dss -20 v 1 t j =55c 5 1 a 10 a v gs(th) -1 -0.6 -0.45 i d(on) -1 a 0.65 0.8 t j =125c 0.9 1.1 0.85 1 ? 1.05 1.3 ? g fs 0.9 s v sd -0.66 -1 v i s -0.5 a c iss 72 100 pf c oss 17 pf c rss 9pf t d(on) 60.5 ns t r 150 ns t d(off) 612 ns t f 436 ns t rr 27 35 ns q rr 8.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-0.5a, di/dt=100a/ s i dss zero gate voltage drain current v ds =-20v, v gs =0v body diode reverse recovery time i f =-0.5a, di/dt=100a/ s turn-off fall time turn-on delaytime switching parameters p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters drain-source breakdown voltage i d =-250 a, v gs =0v parameter conditions ? i gss r ds(on) on state drain current static drain-source on-resistance ? v gs =-4.5v, v ds =-5v v ds =v gs i d =-250 a v ds =0v, v gs =4.5v v gs =-4.5v, v ds =-10v, r l =50 ? , r gen =3 ? turn-on rise time turn-off delaytime input capacitance i s =-0.1a,v gs =0v maximum body-diode continuous current dynamic parameters v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance diode forward voltage v ds =0v, v gs =8v gate threshold voltage gate-body leakage current v ds =-5v, i d =-0.51a v gs =-4.5v, i d =-0.5a v gs =-2.5v, i d =-0.5a v gs =-1.8v, i d =-0.3a forward transconductance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the maximum current rating is limited by bond-wires rev5: oct 2008 AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 5 / 9
p-channel typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) -3.5v v gs =-2.0v -3v -6v -10v -4.5v 0 1 2 3 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 0.3 0.5 0.7 0.9 1.1 1.3 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0.5a 25c 125c -4v v gs =-2.5v -2.5v v gs =-1.8v v gs =-2.5v v gs =-4.5v AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 6 / 9
p-channel typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 20 40 60 80 100 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-10v i d =-0.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =330c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 7 / 9
- + vd c ig v ds d u t - + vd c v gs v gs 10v q g q gs q gd c harge g ate c harge test c ircuit & w aveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 8 / 9
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AO5600E complementary enhancement mode field effect transistor www.freescale.net.cn 9 / 9
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